The Effects of Electron-Beam-Radiation-Induced Damage on Single-Crystal Silicon Devices with SiO(2) Surface Passivation in a Nitrogen Atmosphere.
- DOI
- 10.3390/ma19101964
- Published
- 2026 May 10
- Container
- Materials (Basel, Switzerland)
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.3390/ma19101964,
title = {The Effects of Electron-Beam-Radiation-Induced Damage on Single-Crystal Silicon Devices with SiO(2) Surface Passivation in a Nitrogen Atmosphere.},
author = {Yang Y and Lei Y and Li X and Bing W and Li H and Xiang Y and Peng S},
year = {2026},
journal = {Materials (Basel, Switzerland)},
doi = {10.3390/ma19101964},
url = {https://doi.org/10.3390/ma19101964}
}RIS
TY - JOUR TI - The Effects of Electron-Beam-Radiation-Induced Damage on Single-Crystal Silicon Devices with SiO(2) Surface Passivation in a Nitrogen Atmosphere. AU - Yang Y AU - Lei Y AU - Li X AU - Bing W AU - Li H AU - Xiang Y AU - Peng S PY - 2026 JO - Materials (Basel, Switzerland) DO - 10.3390/ma19101964 UR - https://doi.org/10.3390/ma19101964 ER -
APA
Y, Y., Y, L., X, L., W, B., H, L., Y, X., & S, P. (2026). The Effects of Electron-Beam-Radiation-Induced Damage on Single-Crystal Silicon Devices with SiO(2) Surface Passivation in a Nitrogen Atmosphere.. Materials (Basel, Switzerland). https://doi.org/10.3390/ma19101964
Source records
- pubmed · retrieved 2026-09-26T03:17:37.836Z