Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances
- DOI
- 10.3390/ma19112205
- Published
- 2026-05-23
- Container
- Materials
- Publisher
- MDPI AG
- Open access
- unknown
Credibility signals
uncertain Score 64/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.
Show all credibility signals
- supportingDOI registered: A matching record was returned by Crossref.
- supportingDOI resolves: A matching record was returned by Crossref.
- not scoredDirectory of Open Access Journals: No matching DOAJ record was present in this response. No allow-list match; this is not evidence of low credibility.
- not scoredMEDLINE indexed: Not checked or no result supplied; no credibility inference made.
- not scoredOpenAlex core source: Not checked or no result supplied; no credibility inference made.
- not scoredKnown publisher allow-list: Not checked or no result supplied; no credibility inference made.
- not scoredROR affiliation: Not checked or no result supplied; no credibility inference made.
- not scoredRetraction Watch retraction: No retraction notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredRetraction Watch expression of concern: No expression of concern notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredRetraction Watch correction: No correction notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredRetraction Watch reinstatement: No reinstatement notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredOpen access status: Not checked or no result supplied; no credibility inference made.
- not scoredPublication license: Not checked or no result supplied; no credibility inference made.
- not scoredPublication version: A publication version was supplied but is not scored.
- supportingMetadata completeness: All 6 scored descriptive metadata groups are present.
Cite this work
BibTeX
@article{allodium:10.3390/ma19112205,
title = {Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances},
author = {Taofei Pu and Xiaobo Li and Liuan Li and Jin-Ping Ao},
year = {2026},
journal = {Materials},
doi = {10.3390/ma19112205},
url = {https://doi.org/10.3390/ma19112205}
}RIS
TY - JOUR TI - Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances AU - Taofei Pu AU - Xiaobo Li AU - Liuan Li AU - Jin-Ping Ao PY - 2026 JO - Materials DO - 10.3390/ma19112205 UR - https://doi.org/10.3390/ma19112205 ER -
APA
Pu, T., Li, X., Li, L., & Ao, J. (2026). Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. Materials. https://doi.org/10.3390/ma19112205
Source records
- crossref · retrieved 2026-09-26T02:53:11.338Z