Challenges, Power-Device Progress, and Emerging Harsh-Environment Applications for Ultrawide-Bandgap Diamond Semiconductors.

Alshammari N, Rao MV, Li Q

DOI: 10.3390/ma19163529
Published: 2026 Aug 20
Container: Materials (Basel, Switzerland)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/ma19163529,
  title = {Challenges, Power-Device Progress, and Emerging Harsh-Environment Applications for Ultrawide-Bandgap Diamond Semiconductors.},
  author = {Alshammari N and Rao MV and Li Q},
  year = {2026},
  journal = {Materials (Basel, Switzerland)},
  doi = {10.3390/ma19163529},
  url = {https://doi.org/10.3390/ma19163529}
}

RIS

TY  - JOUR
TI  - Challenges, Power-Device Progress, and Emerging Harsh-Environment Applications for Ultrawide-Bandgap Diamond Semiconductors.
AU  - Alshammari N
AU  - Rao MV
AU  - Li Q
PY  - 2026
JO  - Materials (Basel, Switzerland)
DO  - 10.3390/ma19163529
UR  - https://doi.org/10.3390/ma19163529
ER  -

APA

N, A., MV, R., & Q, L. (2026). Challenges, Power-Device Progress, and Emerging Harsh-Environment Applications for Ultrawide-Bandgap Diamond Semiconductors.. Materials (Basel, Switzerland). https://doi.org/10.3390/ma19163529

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pubmed · retrieved 2026-09-25T04:45:57.752Z