Recent Progress of Photodetectors and Optoelectronic Synapses Based on Metal Oxide Thin-Film Transistors.

Ren J, Liang L, Cao H

DOI: 10.3390/ma19173626
Published: 2026 Aug 26
Container: Materials (Basel, Switzerland)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/ma19173626,
  title = {Recent Progress of Photodetectors and Optoelectronic Synapses Based on Metal Oxide Thin-Film Transistors.},
  author = {Ren J and Liang L and Cao H},
  year = {2026},
  journal = {Materials (Basel, Switzerland)},
  doi = {10.3390/ma19173626},
  url = {https://doi.org/10.3390/ma19173626}
}

RIS

TY  - JOUR
TI  - Recent Progress of Photodetectors and Optoelectronic Synapses Based on Metal Oxide Thin-Film Transistors.
AU  - Ren J
AU  - Liang L
AU  - Cao H
PY  - 2026
JO  - Materials (Basel, Switzerland)
DO  - 10.3390/ma19173626
UR  - https://doi.org/10.3390/ma19173626
ER  -

APA

J, R., L, L., & H, C. (2026). Recent Progress of Photodetectors and Optoelectronic Synapses Based on Metal Oxide Thin-Film Transistors.. Materials (Basel, Switzerland). https://doi.org/10.3390/ma19173626

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pubmed · retrieved 2026-11-10T14:39:14.347Z