Thermally Enhanced Dual-Mode Resistive Switching via Interfacial Strain Engineering in SmNiO3/PMN-PT Heterostructures

Jianfeng Yang, Qin Du

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DOI: 10.3390/ma19183838
Published: 2026-09-09
Container: Materials
Publisher: MDPI AG
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.3390/ma19183838,
  title = {Thermally Enhanced Dual-Mode Resistive Switching via Interfacial Strain Engineering in SmNiO3/PMN-PT Heterostructures},
  author = {Jianfeng Yang and Qin Du},
  year = {2026},
  journal = {Materials},
  doi = {10.3390/ma19183838},
  url = {https://doi.org/10.3390/ma19183838}
}

RIS

TY  - JOUR
TI  - Thermally Enhanced Dual-Mode Resistive Switching via Interfacial Strain Engineering in SmNiO3/PMN-PT Heterostructures
AU  - Jianfeng Yang
AU  - Qin Du
PY  - 2026
JO  - Materials
DO  - 10.3390/ma19183838
UR  - https://doi.org/10.3390/ma19183838
ER  -

APA

Yang, J., & Du, Q. (2026). Thermally Enhanced Dual-Mode Resistive Switching via Interfacial Strain Engineering in SmNiO3/PMN-PT Heterostructures. Materials. https://doi.org/10.3390/ma19183838

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crossref · retrieved 2026-09-26T13:47:00.252Z