Enhanced Performance of In2O3/SnO2 Dual-Channel Thin-Film Transistor by Heterostructure Strategy

Pengbo Guo, Wenwu Pan, Kaijie Gu, Ziyue Hu, Shihao Wei, Yueyan Tian, Hailin Jing, Xiaochao Wu, Ying Li, Wengao Pan

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DOI: 10.3390/ma19204284
Published: 2026-10-11
Container: Materials
Publisher: MDPI AG
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.3390/ma19204284,
  title = {Enhanced Performance of In2O3/SnO2 Dual-Channel Thin-Film Transistor by Heterostructure Strategy},
  author = {Pengbo Guo and Wenwu Pan and Kaijie Gu and Ziyue Hu and Shihao Wei and Yueyan Tian and Hailin Jing and Xiaochao Wu and Ying Li and Wengao Pan},
  year = {2026},
  journal = {Materials},
  doi = {10.3390/ma19204284},
  url = {https://doi.org/10.3390/ma19204284}
}

RIS

TY  - JOUR
TI  - Enhanced Performance of In2O3/SnO2 Dual-Channel Thin-Film Transistor by Heterostructure Strategy
AU  - Pengbo Guo
AU  - Wenwu Pan
AU  - Kaijie Gu
AU  - Ziyue Hu
AU  - Shihao Wei
AU  - Yueyan Tian
AU  - Hailin Jing
AU  - Xiaochao Wu
AU  - Ying Li
AU  - Wengao Pan
PY  - 2026
JO  - Materials
DO  - 10.3390/ma19204284
UR  - https://doi.org/10.3390/ma19204284
ER  -

APA

Guo, P., Pan, W., Gu, K., Hu, Z., Wei, S., Tian, Y., Jing, H., Wu, X., Li, Y., & Pan, W. (2026). Enhanced Performance of In2O3/SnO2 Dual-Channel Thin-Film Transistor by Heterostructure Strategy. Materials. https://doi.org/10.3390/ma19204284

Source records

crossref · retrieved 2026-11-06T14:22:46.636Z