A Novel Germanium-Around-Source Gate-All-Around tunnelling Field-Effect Transistor for Low-Power Applications.

Han K, Long S, Deng Z, Zhang Y, Li J

DOI: 10.3390/mi11020164
Published: 2020 Feb 3
Container: Micromachines
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/mi11020164,
  title = {A Novel Germanium-Around-Source Gate-All-Around tunnelling Field-Effect Transistor for Low-Power Applications.},
  author = {Han K and Long S and Deng Z and Zhang Y and Li J},
  year = {2020},
  journal = {Micromachines},
  doi = {10.3390/mi11020164},
  url = {https://doi.org/10.3390/mi11020164}
}

RIS

TY  - JOUR
TI  - A Novel Germanium-Around-Source Gate-All-Around tunnelling Field-Effect Transistor for Low-Power Applications.
AU  - Han K
AU  - Long S
AU  - Deng Z
AU  - Zhang Y
AU  - Li J
PY  - 2020
JO  - Micromachines
DO  - 10.3390/mi11020164
UR  - https://doi.org/10.3390/mi11020164
ER  -

APA

K, H., S, L., Z, D., Y, Z., & J, L. (2020). A Novel Germanium-Around-Source Gate-All-Around tunnelling Field-Effect Transistor for Low-Power Applications.. Micromachines. https://doi.org/10.3390/mi11020164

Source records

pubmed · retrieved 2026-09-25T04:48:07.526Z