Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications.
- DOI
- 10.3390/mi11020222
- Published
- 2020 Feb 21
- Container
- Micromachines
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.3390/mi11020222,
title = {Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications.},
author = {Lin YC and Chen SH and Lee PH and Lai KH and Huang TJ and Chang EY and Hsu HT},
year = {2020},
journal = {Micromachines},
doi = {10.3390/mi11020222},
url = {https://doi.org/10.3390/mi11020222}
}RIS
TY - JOUR TI - Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications. AU - Lin YC AU - Chen SH AU - Lee PH AU - Lai KH AU - Huang TJ AU - Chang EY AU - Hsu HT PY - 2020 JO - Micromachines DO - 10.3390/mi11020222 UR - https://doi.org/10.3390/mi11020222 ER -
APA
YC, L., SH, C., PH, L., KH, L., TJ, H., EY, C., & HT, H. (2020). Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications.. Micromachines. https://doi.org/10.3390/mi11020222
Source records
- pubmed · retrieved 2026-11-10T07:16:41.118Z