Hysteresis in As-Synthesized MoS(2) Transistors: Origin and Sensing Perspectives.

Marquez C, Salazar N, Gity F, Galdon JC, Navarro C, Sampedro C, Hurley PK, Chang EY, Gamiz F

Open source

DOI
10.3390/mi12060646
Published
2021 May 31
Container
Micromachines
Publisher
Not recorded
Open access
yes

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BibTeX

@article{allodium:10.3390/mi12060646,
  title = {Hysteresis in As-Synthesized MoS(2) Transistors: Origin and Sensing Perspectives.},
  author = {Marquez C and Salazar N and Gity F and Galdon JC and Navarro C and Sampedro C and Hurley PK and Chang EY and Gamiz F},
  year = {2021},
  journal = {Micromachines},
  doi = {10.3390/mi12060646},
  url = {https://doi.org/10.3390/mi12060646}
}

RIS

TY  - JOUR
TI  - Hysteresis in As-Synthesized MoS(2) Transistors: Origin and Sensing Perspectives.
AU  - Marquez C
AU  - Salazar N
AU  - Gity F
AU  - Galdon JC
AU  - Navarro C
AU  - Sampedro C
AU  - Hurley PK
AU  - Chang EY
AU  - Gamiz F
PY  - 2021
JO  - Micromachines
DO  - 10.3390/mi12060646
UR  - https://doi.org/10.3390/mi12060646
ER  -

APA

C, M., N, S., F, G., JC, G., C, N., C, S., PK, H., EY, C., & F, G. (2021). Hysteresis in As-Synthesized MoS(2) Transistors: Origin and Sensing Perspectives.. Micromachines. https://doi.org/10.3390/mi12060646

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