Measurement of Residual Stress and Young's Modulus on Micromachined Monocrystalline 3C-SiC Layers Grown on <111> and <100> Silicon.
- DOI
- 10.3390/mi12091072
- Published
- 2021 Sep 3
- Container
- Micromachines
- Publisher
- Not recorded
- Open access
- yes
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BibTeX
@article{allodium:10.3390/mi12091072,
title = {Measurement of Residual Stress and Young's Modulus on Micromachined Monocrystalline 3C-SiC Layers Grown on <111> and <100> Silicon.},
author = {Sapienza S and Ferri M and Belsito L and Marini D and Zielinski M and La Via F and Roncaglia A},
year = {2021},
journal = {Micromachines},
doi = {10.3390/mi12091072},
url = {https://doi.org/10.3390/mi12091072}
}RIS
TY - JOUR TI - Measurement of Residual Stress and Young's Modulus on Micromachined Monocrystalline 3C-SiC Layers Grown on <111> and <100> Silicon. AU - Sapienza S AU - Ferri M AU - Belsito L AU - Marini D AU - Zielinski M AU - La Via F AU - Roncaglia A PY - 2021 JO - Micromachines DO - 10.3390/mi12091072 UR - https://doi.org/10.3390/mi12091072 ER -
APA
S, S., M, F., L, B., D, M., M, Z., F, L. V., & A, R. (2021). Measurement of Residual Stress and Young's Modulus on Micromachined Monocrystalline 3C-SiC Layers Grown on <111> and <100> Silicon.. Micromachines. https://doi.org/10.3390/mi12091072
Source records
- pubmed · retrieved 2026-09-26T11:42:07.656Z