Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT.

Khediri A, Talbi A, Jaouad A, Maher H, Soltani A

DOI: 10.3390/mi12111284
Published: 2021 Oct 21
Container: Micromachines
Publisher: Not recorded
Open access: yes

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BibTeX

@article{allodium:10.3390/mi12111284,
  title = {Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT.},
  author = {Khediri A and Talbi A and Jaouad A and Maher H and Soltani A},
  year = {2021},
  journal = {Micromachines},
  doi = {10.3390/mi12111284},
  url = {https://doi.org/10.3390/mi12111284}
}

RIS

TY  - JOUR
TI  - Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT.
AU  - Khediri A
AU  - Talbi A
AU  - Jaouad A
AU  - Maher H
AU  - Soltani A
PY  - 2021
JO  - Micromachines
DO  - 10.3390/mi12111284
UR  - https://doi.org/10.3390/mi12111284
ER  -

APA

A, K., A, T., A, J., H, M., & A, S. (2021). Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT.. Micromachines. https://doi.org/10.3390/mi12111284

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pubmed · retrieved 2026-09-26T00:27:13.273Z