Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM)
- DOI
- 10.3390/mi12111288
- Published
- 2021-10-21
- Container
- Micromachines
- Publisher
- MDPI AG
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.3390/mi12111288,
title = {Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM)},
author = {Furqan Zahoor and Fawnizu Azmadi Hussin and Farooq Ahmad Khanday and Mohamad Radzi Ahmad and Illani Mohd Nawi},
year = {2021},
journal = {Micromachines},
doi = {10.3390/mi12111288},
url = {https://doi.org/10.3390/mi12111288}
}RIS
TY - JOUR TI - Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM) AU - Furqan Zahoor AU - Fawnizu Azmadi Hussin AU - Farooq Ahmad Khanday AU - Mohamad Radzi Ahmad AU - Illani Mohd Nawi PY - 2021 JO - Micromachines DO - 10.3390/mi12111288 UR - https://doi.org/10.3390/mi12111288 ER -
APA
Zahoor, F., Hussin, F. A., Khanday, F. A., Ahmad, M. R., & Nawi, I. M. (2021). Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM). Micromachines. https://doi.org/10.3390/mi12111288
Source records
- crossref · retrieved 2026-09-24T21:56:25.315Z