Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors.
- DOI
- 10.3390/mi13091519
- Published
- 2022 Sep 14
- Container
- Micromachines
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.3390/mi13091519,
title = {Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors.},
author = {Abid I and Hamdaoui Y and Mehta J and Derluyn J and Medjdoub F},
year = {2022},
journal = {Micromachines},
doi = {10.3390/mi13091519},
url = {https://doi.org/10.3390/mi13091519}
}RIS
TY - JOUR TI - Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors. AU - Abid I AU - Hamdaoui Y AU - Mehta J AU - Derluyn J AU - Medjdoub F PY - 2022 JO - Micromachines DO - 10.3390/mi13091519 UR - https://doi.org/10.3390/mi13091519 ER -
APA
I, A., Y, H., J, M., J, D., & F, M. (2022). Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors.. Micromachines. https://doi.org/10.3390/mi13091519
Source records
- pubmed · retrieved 2026-09-26T19:55:56.909Z