InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications.

Gibasiewicz K, Kafar A, Schiavon D, Saba K, Marona Ł, Kamińska E, Perlin P

DOI: 10.3390/mi14020408
Published: 2023 Feb 9
Container: Micromachines
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/mi14020408,
  title = {InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications.},
  author = {Gibasiewicz K and Kafar A and Schiavon D and Saba K and Marona Ł and Kamińska E and Perlin P},
  year = {2023},
  journal = {Micromachines},
  doi = {10.3390/mi14020408},
  url = {https://doi.org/10.3390/mi14020408}
}

RIS

TY  - JOUR
TI  - InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications.
AU  - Gibasiewicz K
AU  - Kafar A
AU  - Schiavon D
AU  - Saba K
AU  - Marona Ł
AU  - Kamińska E
AU  - Perlin P
PY  - 2023
JO  - Micromachines
DO  - 10.3390/mi14020408
UR  - https://doi.org/10.3390/mi14020408
ER  -

APA

K, G., A, K., D, S., K, S., Ł, M., E, K., & P, P. (2023). InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications.. Micromachines. https://doi.org/10.3390/mi14020408

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pubmed · retrieved 2026-09-26T04:10:13.435Z