Novel Low Power Cross-Coupled FET-Based Sense Amplifier Design for High-Speed SRAM Circuits
- DOI
- 10.3390/mi14030581
- Published
- 2023-02-28
- Container
- Micromachines
- Publisher
- MDPI AG
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.3390/mi14030581,
title = {Novel Low Power Cross-Coupled FET-Based Sense Amplifier Design for High-Speed SRAM Circuits},
author = {G. Lakshmi Priya and Puneet Saran and Shikhar Kumar Padhy and Prateek Agarwal and A. Andrew Roobert and L. Jerart Julus},
year = {2023},
journal = {Micromachines},
doi = {10.3390/mi14030581},
url = {https://doi.org/10.3390/mi14030581}
}RIS
TY - JOUR TI - Novel Low Power Cross-Coupled FET-Based Sense Amplifier Design for High-Speed SRAM Circuits AU - G. Lakshmi Priya AU - Puneet Saran AU - Shikhar Kumar Padhy AU - Prateek Agarwal AU - A. Andrew Roobert AU - L. Jerart Julus PY - 2023 JO - Micromachines DO - 10.3390/mi14030581 UR - https://doi.org/10.3390/mi14030581 ER -
APA
Priya, G. L., Saran, P., Padhy, S. K., Agarwal, P., Roobert, A. A., & Julus, L. J. (2023). Novel Low Power Cross-Coupled FET-Based Sense Amplifier Design for High-Speed SRAM Circuits. Micromachines. https://doi.org/10.3390/mi14030581
Source records
- crossref · retrieved 2026-09-26T13:23:15.630Z