MOSs-String-Triggered Silicon-Controlled Rectifier (MTSCR) ESD Protection Device for 1.8 V Application

Ruibo Chen, Hao Wei, Hongxia Liu, Fei Hou, Qi Xiang, Feibo Du, Cong Yan, Tianzhi Gao, Zhiwei Liu

Open source

DOI: 10.3390/mi14030632
Published: 2023-03-10
Container: Micromachines
Publisher: MDPI AG
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.3390/mi14030632,
  title = {MOSs-String-Triggered Silicon-Controlled Rectifier (MTSCR) ESD Protection Device for 1.8 V Application},
  author = {Ruibo Chen and Hao Wei and Hongxia Liu and Fei Hou and Qi Xiang and Feibo Du and Cong Yan and Tianzhi Gao and Zhiwei Liu},
  year = {2023},
  journal = {Micromachines},
  doi = {10.3390/mi14030632},
  url = {https://doi.org/10.3390/mi14030632}
}

RIS

TY  - JOUR
TI  - MOSs-String-Triggered Silicon-Controlled Rectifier (MTSCR) ESD Protection Device for 1.8 V Application
AU  - Ruibo Chen
AU  - Hao Wei
AU  - Hongxia Liu
AU  - Fei Hou
AU  - Qi Xiang
AU  - Feibo Du
AU  - Cong Yan
AU  - Tianzhi Gao
AU  - Zhiwei Liu
PY  - 2023
JO  - Micromachines
DO  - 10.3390/mi14030632
UR  - https://doi.org/10.3390/mi14030632
ER  -

APA

Chen, R., Wei, H., Liu, H., Hou, F., Xiang, Q., Du, F., Yan, C., Gao, T., & Liu, Z. (2023). MOSs-String-Triggered Silicon-Controlled Rectifier (MTSCR) ESD Protection Device for 1.8 V Application. Micromachines. https://doi.org/10.3390/mi14030632

Source records

crossref · retrieved 2026-09-25T12:43:49.583Z