A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap

An-Chen Liu, Yung-Yu Lai, Hsin-Chu Chen, An-Ping Chiu, Hao-Chung Kuo

Open source

DOI
10.3390/mi14040764
Published
2023-03-29
Container
Micromachines
Publisher
MDPI AG
Open access
unknown

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BibTeX

@article{allodium:10.3390/mi14040764,
  title = {A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap},
  author = {An-Chen Liu and Yung-Yu Lai and Hsin-Chu Chen and An-Ping Chiu and Hao-Chung Kuo},
  year = {2023},
  journal = {Micromachines},
  doi = {10.3390/mi14040764},
  url = {https://doi.org/10.3390/mi14040764}
}

RIS

TY  - JOUR
TI  - A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap
AU  - An-Chen Liu
AU  - Yung-Yu Lai
AU  - Hsin-Chu Chen
AU  - An-Ping Chiu
AU  - Hao-Chung Kuo
PY  - 2023
JO  - Micromachines
DO  - 10.3390/mi14040764
UR  - https://doi.org/10.3390/mi14040764
ER  - 

APA

Liu, A., Lai, Y., Chen, H., Chiu, A., & Kuo, H. (2023). A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap. Micromachines. https://doi.org/10.3390/mi14040764

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