A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap
- DOI
- 10.3390/mi14040764
- Published
- 2023-03-29
- Container
- Micromachines
- Publisher
- MDPI AG
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.3390/mi14040764,
title = {A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap},
author = {An-Chen Liu and Yung-Yu Lai and Hsin-Chu Chen and An-Ping Chiu and Hao-Chung Kuo},
year = {2023},
journal = {Micromachines},
doi = {10.3390/mi14040764},
url = {https://doi.org/10.3390/mi14040764}
}RIS
TY - JOUR TI - A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap AU - An-Chen Liu AU - Yung-Yu Lai AU - Hsin-Chu Chen AU - An-Ping Chiu AU - Hao-Chung Kuo PY - 2023 JO - Micromachines DO - 10.3390/mi14040764 UR - https://doi.org/10.3390/mi14040764 ER -
APA
Liu, A., Lai, Y., Chen, H., Chiu, A., & Kuo, H. (2023). A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap. Micromachines. https://doi.org/10.3390/mi14040764
Source records
- crossref · retrieved 2026-09-25T14:30:31.021Z