Microscale Engineering of n-Type Doping in Nanostructured Gallium Antimonide: AC Impedance Spectroscopy Insights on Grain Boundary Characterization and Strategies for Controlled Dopant Distribution.

Hall MJ, Vashaee D.

Open source

DOI: 10.3390/mi14091801
Published: 2023-09-21
Container: Micromachines (Basel)
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/mi14091801,
  title = {Microscale Engineering of n-Type Doping in Nanostructured Gallium Antimonide: AC Impedance Spectroscopy Insights on Grain Boundary Characterization and Strategies for Controlled Dopant Distribution.},
  author = {Hall MJ and  Vashaee D.},
  year = {2023},
  journal = {Micromachines (Basel)},
  doi = {10.3390/mi14091801},
  url = {https://doi.org/10.3390/mi14091801}
}

RIS

TY  - JOUR
TI  - Microscale Engineering of n-Type Doping in Nanostructured Gallium Antimonide: AC Impedance Spectroscopy Insights on Grain Boundary Characterization and Strategies for Controlled Dopant Distribution.
AU  - Hall MJ
AU  -  Vashaee D.
PY  - 2023
JO  - Micromachines (Basel)
DO  - 10.3390/mi14091801
UR  - https://doi.org/10.3390/mi14091801
ER  -

APA

MJ, H., & D., V. (2023). Microscale Engineering of n-Type Doping in Nanostructured Gallium Antimonide: AC Impedance Spectroscopy Insights on Grain Boundary Characterization and Strategies for Controlled Dopant Distribution.. Micromachines (Basel). https://doi.org/10.3390/mi14091801

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europe-pmc · retrieved 2026-09-26T06:14:46.038Z
doaj · retrieved 2026-09-26T06:14:46.021Z