Design of Power Amplifiers for BDS-3 Terminal Based on InGaP/GaAs HBT MMIC and LGA Technology.

Li Z, Huang J, Zhang J, Jia S, Sun H, Li G, Wen G

Open source

DOI
10.3390/mi14111995
Published
2023 Oct 27
Container
Micromachines
Publisher
Not recorded
Open access
yes

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BibTeX

@article{allodium:10.3390/mi14111995,
  title = {Design of Power Amplifiers for BDS-3 Terminal Based on InGaP/GaAs HBT MMIC and LGA Technology.},
  author = {Li Z and Huang J and Zhang J and Jia S and Sun H and Li G and Wen G},
  year = {2023},
  journal = {Micromachines},
  doi = {10.3390/mi14111995},
  url = {https://doi.org/10.3390/mi14111995}
}

RIS

TY  - JOUR
TI  - Design of Power Amplifiers for BDS-3 Terminal Based on InGaP/GaAs HBT MMIC and LGA Technology.
AU  - Li Z
AU  - Huang J
AU  - Zhang J
AU  - Jia S
AU  - Sun H
AU  - Li G
AU  - Wen G
PY  - 2023
JO  - Micromachines
DO  - 10.3390/mi14111995
UR  - https://doi.org/10.3390/mi14111995
ER  - 

APA

Z, L., J, H., J, Z., S, J., H, S., G, L., & G, W. (2023). Design of Power Amplifiers for BDS-3 Terminal Based on InGaP/GaAs HBT MMIC and LGA Technology.. Micromachines. https://doi.org/10.3390/mi14111995

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