Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate.

Han Z, Li X, Wang H, Liu Y, Yang W, Lv Z, Wang M, You S, Zhang J, Hao Y

DOI: 10.3390/mi15010156
Published: 2024 Jan 20
Container: Micromachines
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/mi15010156,
  title = {Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate.},
  author = {Han Z and Li X and Wang H and Liu Y and Yang W and Lv Z and Wang M and You S and Zhang J and Hao Y},
  year = {2024},
  journal = {Micromachines},
  doi = {10.3390/mi15010156},
  url = {https://doi.org/10.3390/mi15010156}
}

RIS

TY  - JOUR
TI  - Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate.
AU  - Han Z
AU  - Li X
AU  - Wang H
AU  - Liu Y
AU  - Yang W
AU  - Lv Z
AU  - Wang M
AU  - You S
AU  - Zhang J
AU  - Hao Y
PY  - 2024
JO  - Micromachines
DO  - 10.3390/mi15010156
UR  - https://doi.org/10.3390/mi15010156
ER  -

APA

Z, H., X, L., H, W., Y, L., W, Y., Z, L., M, W., S, Y., J, Z., & Y, H. (2024). Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate.. Micromachines. https://doi.org/10.3390/mi15010156

Source records

pubmed · retrieved 2026-09-26T06:45:03.307Z