Hot-Carrier Damage in N-Channel EDMOS Used in Single Photon Avalanche Diode Cell through Quasi-Static Modeling

Alain Bravaix, Hugo Pitard, Xavier Federspiel, Florian Cacho

Open source

DOI: 10.3390/mi15020205
Published: 2024-01-30
Container: Micromachines
Publisher: MDPI AG
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.3390/mi15020205,
  title = {Hot-Carrier Damage in N-Channel EDMOS Used in Single Photon Avalanche Diode Cell through Quasi-Static Modeling},
  author = {Alain Bravaix and Hugo Pitard and Xavier Federspiel and Florian Cacho},
  year = {2024},
  journal = {Micromachines},
  doi = {10.3390/mi15020205},
  url = {https://doi.org/10.3390/mi15020205}
}

RIS

TY  - JOUR
TI  - Hot-Carrier Damage in N-Channel EDMOS Used in Single Photon Avalanche Diode Cell through Quasi-Static Modeling
AU  - Alain Bravaix
AU  - Hugo Pitard
AU  - Xavier Federspiel
AU  - Florian Cacho
PY  - 2024
JO  - Micromachines
DO  - 10.3390/mi15020205
UR  - https://doi.org/10.3390/mi15020205
ER  -

APA

Bravaix, A., Pitard, H., Federspiel, X., & Cacho, F. (2024). Hot-Carrier Damage in N-Channel EDMOS Used in Single Photon Avalanche Diode Cell through Quasi-Static Modeling. Micromachines. https://doi.org/10.3390/mi15020205

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crossref · retrieved 2026-09-26T16:09:35.489Z