Analyzing Various Structural and Temperature Characteristics of Floating Gate Field Effect Transistors Applicable to Fine-Grain Logic-in-Memory Devices.
- DOI
- 10.3390/mi15040450
- Published
- 2024 Mar 27
- Container
- Micromachines
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.3390/mi15040450,
title = {Analyzing Various Structural and Temperature Characteristics of Floating Gate Field Effect Transistors Applicable to Fine-Grain Logic-in-Memory Devices.},
author = {Cho S and Kim S and Kang M and Baik S and Jeon J},
year = {2024},
journal = {Micromachines},
doi = {10.3390/mi15040450},
url = {https://doi.org/10.3390/mi15040450}
}RIS
TY - JOUR TI - Analyzing Various Structural and Temperature Characteristics of Floating Gate Field Effect Transistors Applicable to Fine-Grain Logic-in-Memory Devices. AU - Cho S AU - Kim S AU - Kang M AU - Baik S AU - Jeon J PY - 2024 JO - Micromachines DO - 10.3390/mi15040450 UR - https://doi.org/10.3390/mi15040450 ER -
APA
S, C., S, K., M, K., S, B., & J, J. (2024). Analyzing Various Structural and Temperature Characteristics of Floating Gate Field Effect Transistors Applicable to Fine-Grain Logic-in-Memory Devices.. Micromachines. https://doi.org/10.3390/mi15040450
Source records
- pubmed · retrieved 2026-11-10T07:23:51.961Z