Analyzing Various Structural and Temperature Characteristics of Floating Gate Field Effect Transistors Applicable to Fine-Grain Logic-in-Memory Devices
- DOI
- 10.3390/mi15040450
- Published
- 2024-03-27
- Container
- Micromachines
- Publisher
- MDPI AG
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.3390/mi15040450,
title = {Analyzing Various Structural and Temperature Characteristics of Floating Gate Field Effect Transistors Applicable to Fine-Grain Logic-in-Memory Devices},
author = {Sangki Cho and Sueyeon Kim and Myounggon Kang and Seungjae Baik and Jongwook Jeon},
year = {2024},
journal = {Micromachines},
doi = {10.3390/mi15040450},
url = {https://doi.org/10.3390/mi15040450}
}RIS
TY - JOUR TI - Analyzing Various Structural and Temperature Characteristics of Floating Gate Field Effect Transistors Applicable to Fine-Grain Logic-in-Memory Devices AU - Sangki Cho AU - Sueyeon Kim AU - Myounggon Kang AU - Seungjae Baik AU - Jongwook Jeon PY - 2024 JO - Micromachines DO - 10.3390/mi15040450 UR - https://doi.org/10.3390/mi15040450 ER -
APA
Cho, S., Kim, S., Kang, M., Baik, S., & Jeon, J. (2024). Analyzing Various Structural and Temperature Characteristics of Floating Gate Field Effect Transistors Applicable to Fine-Grain Logic-in-Memory Devices. Micromachines. https://doi.org/10.3390/mi15040450
Source records
- crossref · retrieved 2026-09-25T07:18:26.381Z