Optimisation of Negative Fixed Charge Based Edge Termination for Vertical GaN Schottky Devices.

Maurya V, Alquier D, El Amrani M, Charles M, Buckley J

DOI: 10.3390/mi15060719
Published: 2024 May 29
Container: Micromachines
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/mi15060719,
  title = {Optimisation of Negative Fixed Charge Based Edge Termination for Vertical GaN Schottky Devices.},
  author = {Maurya V and Alquier D and El Amrani M and Charles M and Buckley J},
  year = {2024},
  journal = {Micromachines},
  doi = {10.3390/mi15060719},
  url = {https://doi.org/10.3390/mi15060719}
}

RIS

TY  - JOUR
TI  - Optimisation of Negative Fixed Charge Based Edge Termination for Vertical GaN Schottky Devices.
AU  - Maurya V
AU  - Alquier D
AU  - El Amrani M
AU  - Charles M
AU  - Buckley J
PY  - 2024
JO  - Micromachines
DO  - 10.3390/mi15060719
UR  - https://doi.org/10.3390/mi15060719
ER  -

APA

V, M., D, A., M, E. A., M, C., & J, B. (2024). Optimisation of Negative Fixed Charge Based Edge Termination for Vertical GaN Schottky Devices.. Micromachines. https://doi.org/10.3390/mi15060719

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pubmed · retrieved 2026-09-25T00:31:46.696Z