Enhancement of Electrical Safe Operation Area of 60 V nLDMOS by Engineering of Reduced Surface Electrical Field in the Drift Region.

Li L, Zhu B, Wu X, Ding S

Open source

DOI
10.3390/mi15070815
Published
2024 Jun 24
Container
Micromachines
Publisher
Not recorded
Open access
yes

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BibTeX

@article{allodium:10.3390/mi15070815,
  title = {Enhancement of Electrical Safe Operation Area of 60 V nLDMOS by Engineering of Reduced Surface Electrical Field in the Drift Region.},
  author = {Li L and Zhu B and Wu X and Ding S},
  year = {2024},
  journal = {Micromachines},
  doi = {10.3390/mi15070815},
  url = {https://doi.org/10.3390/mi15070815}
}

RIS

TY  - JOUR
TI  - Enhancement of Electrical Safe Operation Area of 60 V nLDMOS by Engineering of Reduced Surface Electrical Field in the Drift Region.
AU  - Li L
AU  - Zhu B
AU  - Wu X
AU  - Ding S
PY  - 2024
JO  - Micromachines
DO  - 10.3390/mi15070815
UR  - https://doi.org/10.3390/mi15070815
ER  - 

APA

L, L., B, Z., X, W., & S, D. (2024). Enhancement of Electrical Safe Operation Area of 60 V nLDMOS by Engineering of Reduced Surface Electrical Field in the Drift Region.. Micromachines. https://doi.org/10.3390/mi15070815

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