Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel.

Yugender P, Dhar RS, Nanda S, Kumar K, Sakthivel P, Thirumurugan A

DOI: 10.3390/mi15121455
Published: 2024 Nov 29
Container: Micromachines
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/mi15121455,
  title = {Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel.},
  author = {Yugender P and Dhar RS and Nanda S and Kumar K and Sakthivel P and Thirumurugan A},
  year = {2024},
  journal = {Micromachines},
  doi = {10.3390/mi15121455},
  url = {https://doi.org/10.3390/mi15121455}
}

RIS

TY  - JOUR
TI  - Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel.
AU  - Yugender P
AU  - Dhar RS
AU  - Nanda S
AU  - Kumar K
AU  - Sakthivel P
AU  - Thirumurugan A
PY  - 2024
JO  - Micromachines
DO  - 10.3390/mi15121455
UR  - https://doi.org/10.3390/mi15121455
ER  -

APA

P, Y., RS, D., S, N., K, K., P, S., & A, T. (2024). Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel.. Micromachines. https://doi.org/10.3390/mi15121455

Source records

pubmed · retrieved 2026-11-10T08:34:33.924Z