Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules.

Liu P, Deng Y

DOI: 10.3390/mi16020197
Published: 2025 Feb 8
Container: Micromachines
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/mi16020197,
  title = {Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules.},
  author = {Liu P and Deng Y},
  year = {2025},
  journal = {Micromachines},
  doi = {10.3390/mi16020197},
  url = {https://doi.org/10.3390/mi16020197}
}

RIS

TY  - JOUR
TI  - Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules.
AU  - Liu P
AU  - Deng Y
PY  - 2025
JO  - Micromachines
DO  - 10.3390/mi16020197
UR  - https://doi.org/10.3390/mi16020197
ER  -

APA

P, L., & Y, D. (2025). Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules.. Micromachines. https://doi.org/10.3390/mi16020197

Source records

pubmed · retrieved 2026-09-25T22:49:35.522Z