The Effect of Through-Silicon-Via Thermal Stress on Metal-Oxide-Semiconductor Field-Effect Transistor Properties Under Cooling to Ultra-Low Temperatures
- DOI
- 10.3390/mi16020221
- Published
- 2025-02-15
- Container
- Micromachines
- Publisher
- MDPI AG
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.3390/mi16020221,
title = {The Effect of Through-Silicon-Via Thermal Stress on Metal-Oxide-Semiconductor Field-Effect Transistor Properties Under Cooling to Ultra-Low Temperatures},
author = {Wenting Xie and Xiaoting Chen and Liting Zhang and Xiangjun Lu and Bing Ding and An Xie},
year = {2025},
journal = {Micromachines},
doi = {10.3390/mi16020221},
url = {https://doi.org/10.3390/mi16020221}
}RIS
TY - JOUR TI - The Effect of Through-Silicon-Via Thermal Stress on Metal-Oxide-Semiconductor Field-Effect Transistor Properties Under Cooling to Ultra-Low Temperatures AU - Wenting Xie AU - Xiaoting Chen AU - Liting Zhang AU - Xiangjun Lu AU - Bing Ding AU - An Xie PY - 2025 JO - Micromachines DO - 10.3390/mi16020221 UR - https://doi.org/10.3390/mi16020221 ER -
APA
Xie, W., Chen, X., Zhang, L., Lu, X., Ding, B., & Xie, A. (2025). The Effect of Through-Silicon-Via Thermal Stress on Metal-Oxide-Semiconductor Field-Effect Transistor Properties Under Cooling to Ultra-Low Temperatures. Micromachines. https://doi.org/10.3390/mi16020221
Source records
- crossref · retrieved 2026-11-10T10:49:15.234Z