Double-Sided Fabrication of Low-Leakage-Current Through-Silicon Vias (TSVs) with High-Step-Coverage Liner/Barrier Layers.

Yang B, Sun H, Zhu K, Wang X

Open source

DOI
10.3390/mi16070750
Published
2025 Jun 25
Container
Micromachines
Publisher
Not recorded
Open access
yes

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BibTeX

@article{allodium:10.3390/mi16070750,
  title = {Double-Sided Fabrication of Low-Leakage-Current Through-Silicon Vias (TSVs) with High-Step-Coverage Liner/Barrier Layers.},
  author = {Yang B and Sun H and Zhu K and Wang X},
  year = {2025},
  journal = {Micromachines},
  doi = {10.3390/mi16070750},
  url = {https://doi.org/10.3390/mi16070750}
}

RIS

TY  - JOUR
TI  - Double-Sided Fabrication of Low-Leakage-Current Through-Silicon Vias (TSVs) with High-Step-Coverage Liner/Barrier Layers.
AU  - Yang B
AU  - Sun H
AU  - Zhu K
AU  - Wang X
PY  - 2025
JO  - Micromachines
DO  - 10.3390/mi16070750
UR  - https://doi.org/10.3390/mi16070750
ER  - 

APA

B, Y., H, S., K, Z., & X, W. (2025). Double-Sided Fabrication of Low-Leakage-Current Through-Silicon Vias (TSVs) with High-Step-Coverage Liner/Barrier Layers.. Micromachines. https://doi.org/10.3390/mi16070750

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