The ESD Robustness and Protection Technology of P-GaN HEMT.

Shi Y, Chen Y, He L, Chen X, Chen Y, Lu G

DOI: 10.3390/mi16111269
Published: 2025 Nov 11
Container: Micromachines
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/mi16111269,
  title = {The ESD Robustness and Protection Technology of P-GaN HEMT.},
  author = {Shi Y and Chen Y and He L and Chen X and Chen Y and Lu G},
  year = {2025},
  journal = {Micromachines},
  doi = {10.3390/mi16111269},
  url = {https://doi.org/10.3390/mi16111269}
}

RIS

TY  - JOUR
TI  - The ESD Robustness and Protection Technology of P-GaN HEMT.
AU  - Shi Y
AU  - Chen Y
AU  - He L
AU  - Chen X
AU  - Chen Y
AU  - Lu G
PY  - 2025
JO  - Micromachines
DO  - 10.3390/mi16111269
UR  - https://doi.org/10.3390/mi16111269
ER  -

APA

Y, S., Y, C., L, H., X, C., Y, C., & G, L. (2025). The ESD Robustness and Protection Technology of P-GaN HEMT.. Micromachines. https://doi.org/10.3390/mi16111269

Source records

pubmed · retrieved 2026-09-25T18:03:31.269Z