Photoconductive Gain Behavior of Ni/β-Ga2O3 Schottky Barrier Diode-Based UV Detectors

Viktor V. Kopyev, Nikita N. Yakovlev, Alexander V. Tsymbalov, Dmitry A. Almaev, Pavel V. Kosmachev

Open source

DOI: 10.3390/mi17010100
Published: 2026-01-12
Container: Micromachines
Publisher: MDPI AG
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.3390/mi17010100,
  title = {Photoconductive Gain Behavior of Ni/β-Ga2O3 Schottky Barrier Diode-Based UV Detectors},
  author = {Viktor V. Kopyev and Nikita N. Yakovlev and Alexander V. Tsymbalov and Dmitry A. Almaev and Pavel V. Kosmachev},
  year = {2026},
  journal = {Micromachines},
  doi = {10.3390/mi17010100},
  url = {https://doi.org/10.3390/mi17010100}
}

RIS

TY  - JOUR
TI  - Photoconductive Gain Behavior of Ni/β-Ga2O3 Schottky Barrier Diode-Based UV Detectors
AU  - Viktor V. Kopyev
AU  - Nikita N. Yakovlev
AU  - Alexander V. Tsymbalov
AU  - Dmitry A. Almaev
AU  - Pavel V. Kosmachev
PY  - 2026
JO  - Micromachines
DO  - 10.3390/mi17010100
UR  - https://doi.org/10.3390/mi17010100
ER  -

APA

Kopyev, V. V., Yakovlev, N. N., Tsymbalov, A. V., Almaev, D. A., & Kosmachev, P. V. (2026). Photoconductive Gain Behavior of Ni/β-Ga2O3 Schottky Barrier Diode-Based UV Detectors. Micromachines. https://doi.org/10.3390/mi17010100

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crossref · retrieved 2026-09-26T07:33:31.344Z