High-Indium-Composition, Ultra-Low-Power GaAsSb/InGaAs Heterojunction Tunnel Field-Effect Transistors.

Liu Y, Li X, Zhang DH, Fan MQ, Wang XP, Jin YJ

DOI: 10.3390/mi17020149
Published: 2026 Jan 23
Container: Micromachines
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/mi17020149,
  title = {High-Indium-Composition, Ultra-Low-Power GaAsSb/InGaAs Heterojunction Tunnel Field-Effect Transistors.},
  author = {Liu Y and Li X and Zhang DH and Fan MQ and Wang XP and Jin YJ},
  year = {2026},
  journal = {Micromachines},
  doi = {10.3390/mi17020149},
  url = {https://doi.org/10.3390/mi17020149}
}

RIS

TY  - JOUR
TI  - High-Indium-Composition, Ultra-Low-Power GaAsSb/InGaAs Heterojunction Tunnel Field-Effect Transistors.
AU  - Liu Y
AU  - Li X
AU  - Zhang DH
AU  - Fan MQ
AU  - Wang XP
AU  - Jin YJ
PY  - 2026
JO  - Micromachines
DO  - 10.3390/mi17020149
UR  - https://doi.org/10.3390/mi17020149
ER  -

APA

Y, L., X, L., DH, Z., MQ, F., XP, W., & YJ, J. (2026). High-Indium-Composition, Ultra-Low-Power GaAsSb/InGaAs Heterojunction Tunnel Field-Effect Transistors.. Micromachines. https://doi.org/10.3390/mi17020149

Source records

pubmed · retrieved 2026-09-25T16:22:29.459Z