High-Efficiency and Low-Defect Removal Mechanism of Silicon Carbide Using Center-Inlet Computer-Controlled Polishing

Pengli Lei, Baojian Ji, Jing Hou, Mincai Liu, Wenhui Deng, Fei Fan, Jian Wang, Bo Zhong

Open source

DOI
10.3390/mi17030298
Published
2026-02-27
Container
Micromachines
Publisher
MDPI AG
Open access
unknown

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BibTeX

@article{allodium:10.3390/mi17030298,
  title = {High-Efficiency and Low-Defect Removal Mechanism of Silicon Carbide Using Center-Inlet Computer-Controlled Polishing},
  author = {Pengli Lei and Baojian Ji and Jing Hou and Mincai Liu and Wenhui Deng and Fei Fan and Jian Wang and Bo Zhong},
  year = {2026},
  journal = {Micromachines},
  doi = {10.3390/mi17030298},
  url = {https://doi.org/10.3390/mi17030298}
}

RIS

TY  - JOUR
TI  - High-Efficiency and Low-Defect Removal Mechanism of Silicon Carbide Using Center-Inlet Computer-Controlled Polishing
AU  - Pengli Lei
AU  - Baojian Ji
AU  - Jing Hou
AU  - Mincai Liu
AU  - Wenhui Deng
AU  - Fei Fan
AU  - Jian Wang
AU  - Bo Zhong
PY  - 2026
JO  - Micromachines
DO  - 10.3390/mi17030298
UR  - https://doi.org/10.3390/mi17030298
ER  - 

APA

Lei, P., Ji, B., Hou, J., Liu, M., Deng, W., Fan, F., Wang, J., & Zhong, B. (2026). High-Efficiency and Low-Defect Removal Mechanism of Silicon Carbide Using Center-Inlet Computer-Controlled Polishing. Micromachines. https://doi.org/10.3390/mi17030298

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