High-Efficiency and Low-Defect Removal Mechanism of Silicon Carbide Using Center-Inlet Computer-Controlled Polishing
- DOI
- 10.3390/mi17030298
- Published
- 2026-02-27
- Container
- Micromachines
- Publisher
- MDPI AG
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.3390/mi17030298,
title = {High-Efficiency and Low-Defect Removal Mechanism of Silicon Carbide Using Center-Inlet Computer-Controlled Polishing},
author = {Pengli Lei and Baojian Ji and Jing Hou and Mincai Liu and Wenhui Deng and Fei Fan and Jian Wang and Bo Zhong},
year = {2026},
journal = {Micromachines},
doi = {10.3390/mi17030298},
url = {https://doi.org/10.3390/mi17030298}
}RIS
TY - JOUR TI - High-Efficiency and Low-Defect Removal Mechanism of Silicon Carbide Using Center-Inlet Computer-Controlled Polishing AU - Pengli Lei AU - Baojian Ji AU - Jing Hou AU - Mincai Liu AU - Wenhui Deng AU - Fei Fan AU - Jian Wang AU - Bo Zhong PY - 2026 JO - Micromachines DO - 10.3390/mi17030298 UR - https://doi.org/10.3390/mi17030298 ER -
APA
Lei, P., Ji, B., Hou, J., Liu, M., Deng, W., Fan, F., Wang, J., & Zhong, B. (2026). High-Efficiency and Low-Defect Removal Mechanism of Silicon Carbide Using Center-Inlet Computer-Controlled Polishing. Micromachines. https://doi.org/10.3390/mi17030298
Source records
- crossref · retrieved 2026-09-25T01:45:14.477Z