Investigation of Resistive Switching in Cu/a-SiC/P+-Si Structure for Multilevel Nonvolatile Memory Applications
- DOI
- 10.3390/mi17030364
- Published
- 2026-03-17
- Container
- Micromachines
- Publisher
- MDPI AG
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.3390/mi17030364,
title = {Investigation of Resistive Switching in Cu/a-SiC/P+-Si Structure for Multilevel Nonvolatile Memory Applications},
author = {Hehong Shao and Xiuwei Zhu and Xin Zhang and Wanting Zheng and Libing Zhang and Liangliang Chen},
year = {2026},
journal = {Micromachines},
doi = {10.3390/mi17030364},
url = {https://doi.org/10.3390/mi17030364}
}RIS
TY - JOUR TI - Investigation of Resistive Switching in Cu/a-SiC/P+-Si Structure for Multilevel Nonvolatile Memory Applications AU - Hehong Shao AU - Xiuwei Zhu AU - Xin Zhang AU - Wanting Zheng AU - Libing Zhang AU - Liangliang Chen PY - 2026 JO - Micromachines DO - 10.3390/mi17030364 UR - https://doi.org/10.3390/mi17030364 ER -
APA
Shao, H., Zhu, X., Zhang, X., Zheng, W., Zhang, L., & Chen, L. (2026). Investigation of Resistive Switching in Cu/a-SiC/P+-Si Structure for Multilevel Nonvolatile Memory Applications. Micromachines. https://doi.org/10.3390/mi17030364
Source records
- crossref · retrieved 2026-11-10T07:23:46.575Z