Investigation of Resistive Switching in Cu/a-SiC/P(+)-Si Structure for Multilevel Nonvolatile Memory Applications.

Shao H, Zhu X, Zhang X, Zheng W, Zhang L, Chen L

DOI: 10.3390/mi17030364
Published: 2026 Mar 17
Container: Micromachines
Publisher: Not recorded
Open access: yes

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BibTeX

@article{allodium:10.3390/mi17030364,
  title = {Investigation of Resistive Switching in Cu/a-SiC/P(+)-Si Structure for Multilevel Nonvolatile Memory Applications.},
  author = {Shao H and Zhu X and Zhang X and Zheng W and Zhang L and Chen L},
  year = {2026},
  journal = {Micromachines},
  doi = {10.3390/mi17030364},
  url = {https://doi.org/10.3390/mi17030364}
}

RIS

TY  - JOUR
TI  - Investigation of Resistive Switching in Cu/a-SiC/P(+)-Si Structure for Multilevel Nonvolatile Memory Applications.
AU  - Shao H
AU  - Zhu X
AU  - Zhang X
AU  - Zheng W
AU  - Zhang L
AU  - Chen L
PY  - 2026
JO  - Micromachines
DO  - 10.3390/mi17030364
UR  - https://doi.org/10.3390/mi17030364
ER  -

APA

H, S., X, Z., X, Z., W, Z., L, Z., & L, C. (2026). Investigation of Resistive Switching in Cu/a-SiC/P(+)-Si Structure for Multilevel Nonvolatile Memory Applications.. Micromachines. https://doi.org/10.3390/mi17030364

Source records

pubmed · retrieved 2026-09-26T01:13:23.298Z