Investigation of Resistive Switching in Cu/a-SiC/P+-Si Structure for Multilevel Nonvolatile Memory Applications

Hehong Shao, Xiuwei Zhu, Xin Zhang, Wanting Zheng, Libing Zhang, Liangliang Chen

Open source

DOI
10.3390/mi17030364
Published
2026-03-17
Container
Micromachines
Publisher
MDPI AG
Open access
unknown

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BibTeX

@article{allodium:10.3390/mi17030364,
  title = {Investigation of Resistive Switching in Cu/a-SiC/P+-Si Structure for Multilevel Nonvolatile Memory Applications},
  author = {Hehong Shao and Xiuwei Zhu and Xin Zhang and Wanting Zheng and Libing Zhang and Liangliang Chen},
  year = {2026},
  journal = {Micromachines},
  doi = {10.3390/mi17030364},
  url = {https://doi.org/10.3390/mi17030364}
}

RIS

TY  - JOUR
TI  - Investigation of Resistive Switching in Cu/a-SiC/P+-Si Structure for Multilevel Nonvolatile Memory Applications
AU  - Hehong Shao
AU  - Xiuwei Zhu
AU  - Xin Zhang
AU  - Wanting Zheng
AU  - Libing Zhang
AU  - Liangliang Chen
PY  - 2026
JO  - Micromachines
DO  - 10.3390/mi17030364
UR  - https://doi.org/10.3390/mi17030364
ER  - 

APA

Shao, H., Zhu, X., Zhang, X., Zheng, W., Zhang, L., & Chen, L. (2026). Investigation of Resistive Switching in Cu/a-SiC/P+-Si Structure for Multilevel Nonvolatile Memory Applications. Micromachines. https://doi.org/10.3390/mi17030364

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