Incremental Pulse-Width Erase (IPWE) Scheme for Fast and Variation-Tolerant GIDL Erase of 3D NAND Flash

Youngjun Park, Wonbo Shim

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DOI: 10.3390/mi17040399
Published: 2026-03-25
Container: Micromachines
Publisher: MDPI AG
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.3390/mi17040399,
  title = {Incremental Pulse-Width Erase (IPWE) Scheme for Fast and Variation-Tolerant GIDL Erase of 3D NAND Flash},
  author = {Youngjun Park and Wonbo Shim},
  year = {2026},
  journal = {Micromachines},
  doi = {10.3390/mi17040399},
  url = {https://doi.org/10.3390/mi17040399}
}

RIS

TY  - JOUR
TI  - Incremental Pulse-Width Erase (IPWE) Scheme for Fast and Variation-Tolerant GIDL Erase of 3D NAND Flash
AU  - Youngjun Park
AU  - Wonbo Shim
PY  - 2026
JO  - Micromachines
DO  - 10.3390/mi17040399
UR  - https://doi.org/10.3390/mi17040399
ER  -

APA

Park, Y., & Shim, W. (2026). Incremental Pulse-Width Erase (IPWE) Scheme for Fast and Variation-Tolerant GIDL Erase of 3D NAND Flash. Micromachines. https://doi.org/10.3390/mi17040399

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crossref · retrieved 2026-11-10T07:36:14.501Z