Terahertz Properties of GeAsSeSbSnTe Chalcogenide Glassy Semiconductors.

Andrianov AV, Shakhmin AA, Petrov AG, Sivov NV, Kropotov GI

DOI: 10.3390/mi17050533
Published: 2026 Apr 27
Container: Micromachines
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/mi17050533,
  title = {Terahertz Properties of GeAsSeSbSnTe Chalcogenide Glassy Semiconductors.},
  author = {Andrianov AV and Shakhmin AA and Petrov AG and Sivov NV and Kropotov GI},
  year = {2026},
  journal = {Micromachines},
  doi = {10.3390/mi17050533},
  url = {https://doi.org/10.3390/mi17050533}
}

RIS

TY  - JOUR
TI  - Terahertz Properties of GeAsSeSbSnTe Chalcogenide Glassy Semiconductors.
AU  - Andrianov AV
AU  - Shakhmin AA
AU  - Petrov AG
AU  - Sivov NV
AU  - Kropotov GI
PY  - 2026
JO  - Micromachines
DO  - 10.3390/mi17050533
UR  - https://doi.org/10.3390/mi17050533
ER  -

APA

AV, A., AA, S., AG, P., NV, S., & GI, K. (2026). Terahertz Properties of GeAsSeSbSnTe Chalcogenide Glassy Semiconductors.. Micromachines. https://doi.org/10.3390/mi17050533

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pubmed · retrieved 2026-09-26T04:10:55.982Z