Strong Lateral Mode Confinement by Embedding SiO2 Nanospheres in the DBRs of GaN-Based VCSELs

Huanqing Chen, Menglai Lei, Linghai Meng, Zihao Chu, Weihua Chen, Xiaodong Hu

Open source

DOI: 10.3390/mi17050544
Published: 2026-04-29
Container: Micromachines
Publisher: MDPI AG
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.3390/mi17050544,
  title = {Strong Lateral Mode Confinement by Embedding SiO2 Nanospheres in the DBRs of GaN-Based VCSELs},
  author = {Huanqing Chen and Menglai Lei and Linghai Meng and Zihao Chu and Weihua Chen and Xiaodong Hu},
  year = {2026},
  journal = {Micromachines},
  doi = {10.3390/mi17050544},
  url = {https://doi.org/10.3390/mi17050544}
}

RIS

TY  - JOUR
TI  - Strong Lateral Mode Confinement by Embedding SiO2 Nanospheres in the DBRs of GaN-Based VCSELs
AU  - Huanqing Chen
AU  - Menglai Lei
AU  - Linghai Meng
AU  - Zihao Chu
AU  - Weihua Chen
AU  - Xiaodong Hu
PY  - 2026
JO  - Micromachines
DO  - 10.3390/mi17050544
UR  - https://doi.org/10.3390/mi17050544
ER  -

APA

Chen, H., Lei, M., Meng, L., Chu, Z., Chen, W., & Hu, X. (2026). Strong Lateral Mode Confinement by Embedding SiO2 Nanospheres in the DBRs of GaN-Based VCSELs. Micromachines. https://doi.org/10.3390/mi17050544

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crossref · retrieved 2026-09-26T15:08:23.116Z