A Backside-Electrode-Free Lateral 4H-SiC JFET with Three-Terminal Dual-Gate Design for Stable DC Operation at 500 °C
- DOI
- 10.3390/mi17060642
- Published
- 2026-05-22
- Container
- Micromachines
- Publisher
- MDPI AG
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.3390/mi17060642,
title = {A Backside-Electrode-Free Lateral 4H-SiC JFET with Three-Terminal Dual-Gate Design for Stable DC Operation at 500 °C},
author = {Yuting Tang and Qian Luo and Jiang Zhu and Hezhi Zhang and Yuchun Chang and Hongwei Liang},
year = {2026},
journal = {Micromachines},
doi = {10.3390/mi17060642},
url = {https://doi.org/10.3390/mi17060642}
}RIS
TY - JOUR TI - A Backside-Electrode-Free Lateral 4H-SiC JFET with Three-Terminal Dual-Gate Design for Stable DC Operation at 500 °C AU - Yuting Tang AU - Qian Luo AU - Jiang Zhu AU - Hezhi Zhang AU - Yuchun Chang AU - Hongwei Liang PY - 2026 JO - Micromachines DO - 10.3390/mi17060642 UR - https://doi.org/10.3390/mi17060642 ER -
APA
Tang, Y., Luo, Q., Zhu, J., Zhang, H., Chang, Y., & Liang, H. (2026). A Backside-Electrode-Free Lateral 4H-SiC JFET with Three-Terminal Dual-Gate Design for Stable DC Operation at 500 °C. Micromachines. https://doi.org/10.3390/mi17060642
Source records
- crossref · retrieved 2026-11-10T07:16:18.288Z