A Backside-Electrode-Free Lateral 4H-SiC JFET with Three-Terminal Dual-Gate Design for Stable DC Operation at 500 °C.
- DOI
- 10.3390/mi17060642
- Published
- 2026 May 22
- Container
- Micromachines
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.3390/mi17060642,
title = {A Backside-Electrode-Free Lateral 4H-SiC JFET with Three-Terminal Dual-Gate Design for Stable DC Operation at 500 °C.},
author = {Tang Y and Luo Q and Zhu J and Zhang H and Chang Y and Liang H},
year = {2026},
journal = {Micromachines},
doi = {10.3390/mi17060642},
url = {https://doi.org/10.3390/mi17060642}
}RIS
TY - JOUR TI - A Backside-Electrode-Free Lateral 4H-SiC JFET with Three-Terminal Dual-Gate Design for Stable DC Operation at 500 °C. AU - Tang Y AU - Luo Q AU - Zhu J AU - Zhang H AU - Chang Y AU - Liang H PY - 2026 JO - Micromachines DO - 10.3390/mi17060642 UR - https://doi.org/10.3390/mi17060642 ER -
APA
Y, T., Q, L., J, Z., H, Z., Y, C., & H, L. (2026). A Backside-Electrode-Free Lateral 4H-SiC JFET with Three-Terminal Dual-Gate Design for Stable DC Operation at 500 °C.. Micromachines. https://doi.org/10.3390/mi17060642
Source records
- pubmed · retrieved 2026-09-24T22:14:54.488Z