Interface-Engineered, Low-Damage IGZO/HfO(2) Charge-Trapping Memory Devices Fabricated Using a Remote Plasma ALD Process.

Hwang I, Nam H, Kim J, Kim B, Jang Y, Lee W, Kang M, Yoon C

DOI: 10.3390/mi17060743
Published: 2026 Jun 19
Container: Micromachines
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/mi17060743,
  title = {Interface-Engineered, Low-Damage IGZO/HfO(2) Charge-Trapping Memory Devices Fabricated Using a Remote Plasma ALD Process.},
  author = {Hwang I and Nam H and Kim J and Kim B and Jang Y and Lee W and Kang M and Yoon C},
  year = {2026},
  journal = {Micromachines},
  doi = {10.3390/mi17060743},
  url = {https://doi.org/10.3390/mi17060743}
}

RIS

TY  - JOUR
TI  - Interface-Engineered, Low-Damage IGZO/HfO(2) Charge-Trapping Memory Devices Fabricated Using a Remote Plasma ALD Process.
AU  - Hwang I
AU  - Nam H
AU  - Kim J
AU  - Kim B
AU  - Jang Y
AU  - Lee W
AU  - Kang M
AU  - Yoon C
PY  - 2026
JO  - Micromachines
DO  - 10.3390/mi17060743
UR  - https://doi.org/10.3390/mi17060743
ER  -

APA

I, H., H, N., J, K., B, K., Y, J., W, L., M, K., & C, Y. (2026). Interface-Engineered, Low-Damage IGZO/HfO(2) Charge-Trapping Memory Devices Fabricated Using a Remote Plasma ALD Process.. Micromachines. https://doi.org/10.3390/mi17060743

Source records

pubmed · retrieved 2026-09-25T22:20:27.572Z