Circuit-Level Transient Simulation Study of Recovery Characteristics in a Parallel-Resonator-Assisted GaN SBD Limiter.

Zhao R, Zhang Y, Tian X, Tan X, Xu S, Zhang H, Chen D, Liou J

DOI: 10.3390/mi17070790
Published: 2026 Jun 28
Container: Micromachines
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/mi17070790,
  title = {Circuit-Level Transient Simulation Study of Recovery Characteristics in a Parallel-Resonator-Assisted GaN SBD Limiter.},
  author = {Zhao R and Zhang Y and Tian X and Tan X and Xu S and Zhang H and Chen D and Liou J},
  year = {2026},
  journal = {Micromachines},
  doi = {10.3390/mi17070790},
  url = {https://doi.org/10.3390/mi17070790}
}

RIS

TY  - JOUR
TI  - Circuit-Level Transient Simulation Study of Recovery Characteristics in a Parallel-Resonator-Assisted GaN SBD Limiter.
AU  - Zhao R
AU  - Zhang Y
AU  - Tian X
AU  - Tan X
AU  - Xu S
AU  - Zhang H
AU  - Chen D
AU  - Liou J
PY  - 2026
JO  - Micromachines
DO  - 10.3390/mi17070790
UR  - https://doi.org/10.3390/mi17070790
ER  -

APA

R, Z., Y, Z., X, T., X, T., S, X., H, Z., D, C., & J, L. (2026). Circuit-Level Transient Simulation Study of Recovery Characteristics in a Parallel-Resonator-Assisted GaN SBD Limiter.. Micromachines. https://doi.org/10.3390/mi17070790

Source records

pubmed · retrieved 2026-09-26T20:45:34.935Z