Single and Repetitive Surge Reliability of 1200 V Asymmetric Trench SiC MOSFETs Under Various Gate Biases
- DOI
- 10.3390/mi17070823
- Published
- 2026-07-10
- Container
- Micromachines
- Publisher
- MDPI AG
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.3390/mi17070823,
title = {Single and Repetitive Surge Reliability of 1200 V Asymmetric Trench SiC MOSFETs Under Various Gate Biases},
author = {Menglin Yan and Zhizhe Wang and Dazheng Chen and Yuncong Li and Yongle Zhong and Yuansheng Li and Jun Luo and Hao Xia},
year = {2026},
journal = {Micromachines},
doi = {10.3390/mi17070823},
url = {https://doi.org/10.3390/mi17070823}
}RIS
TY - JOUR TI - Single and Repetitive Surge Reliability of 1200 V Asymmetric Trench SiC MOSFETs Under Various Gate Biases AU - Menglin Yan AU - Zhizhe Wang AU - Dazheng Chen AU - Yuncong Li AU - Yongle Zhong AU - Yuansheng Li AU - Jun Luo AU - Hao Xia PY - 2026 JO - Micromachines DO - 10.3390/mi17070823 UR - https://doi.org/10.3390/mi17070823 ER -
APA
Yan, M., Wang, Z., Chen, D., Li, Y., Zhong, Y., Li, Y., Luo, J., & Xia, H. (2026). Single and Repetitive Surge Reliability of 1200 V Asymmetric Trench SiC MOSFETs Under Various Gate Biases. Micromachines. https://doi.org/10.3390/mi17070823
Source records
- crossref · retrieved 2026-09-24T18:47:38.023Z