Temperature and Bias Dependence of the DC and RF Characteristics of a 150 nm AlGaN/GaN-on-SiC HEMT for Microwave Applications.
- DOI
- 10.3390/mi17080874
- Published
- 2026 Jul 23
- Container
- Micromachines
- Publisher
- Not recorded
- Open access
- yes
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BibTeX
@article{allodium:10.3390/mi17080874,
title = {Temperature and Bias Dependence of the DC and RF Characteristics of a 150 nm AlGaN/GaN-on-SiC HEMT for Microwave Applications.},
author = {Alim MA and Gaquiere C},
year = {2026},
journal = {Micromachines},
doi = {10.3390/mi17080874},
url = {https://doi.org/10.3390/mi17080874}
}RIS
TY - JOUR TI - Temperature and Bias Dependence of the DC and RF Characteristics of a 150 nm AlGaN/GaN-on-SiC HEMT for Microwave Applications. AU - Alim MA AU - Gaquiere C PY - 2026 JO - Micromachines DO - 10.3390/mi17080874 UR - https://doi.org/10.3390/mi17080874 ER -
APA
MA, A., & C, G. (2026). Temperature and Bias Dependence of the DC and RF Characteristics of a 150 nm AlGaN/GaN-on-SiC HEMT for Microwave Applications.. Micromachines. https://doi.org/10.3390/mi17080874
Source records
- pubmed · retrieved 2026-09-26T13:23:30.305Z