Correlation Between Geometric Parameters and Capacitance in Silicon Detectors: A Study Based on Physical Modeling, Simulation, and Experiment.
- DOI
- 10.3390/mi17080888
- Published
- 2026 Jul 25
- Container
- Micromachines
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.3390/mi17080888,
title = {Correlation Between Geometric Parameters and Capacitance in Silicon Detectors: A Study Based on Physical Modeling, Simulation, and Experiment.},
author = {Li X and Long T and Zhao J and Lu S and Xiao Y and Li Z},
year = {2026},
journal = {Micromachines},
doi = {10.3390/mi17080888},
url = {https://doi.org/10.3390/mi17080888}
}RIS
TY - JOUR TI - Correlation Between Geometric Parameters and Capacitance in Silicon Detectors: A Study Based on Physical Modeling, Simulation, and Experiment. AU - Li X AU - Long T AU - Zhao J AU - Lu S AU - Xiao Y AU - Li Z PY - 2026 JO - Micromachines DO - 10.3390/mi17080888 UR - https://doi.org/10.3390/mi17080888 ER -
APA
X, L., T, L., J, Z., S, L., Y, X., & Z, L. (2026). Correlation Between Geometric Parameters and Capacitance in Silicon Detectors: A Study Based on Physical Modeling, Simulation, and Experiment.. Micromachines. https://doi.org/10.3390/mi17080888
Source records
- pubmed · retrieved 2026-09-25T07:14:18.403Z