High-Efficiency Sub-100 nm Gate GaN HEMTs Enabled by Two-Step SiNx Layer Etching Technique
- DOI
- 10.3390/mi17080889
- Published
- 2026-07-25
- Container
- Micromachines
- Publisher
- MDPI AG
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.3390/mi17080889,
title = {High-Efficiency Sub-100 nm Gate GaN HEMTs Enabled by Two-Step SiNx Layer Etching Technique},
author = {Xiangxin Cao and Pengfei Wang and Minhan Mi and Xinyu Liu and Dongxu Xiao and Xiang Du and Maoteng Lu and Feiyang Chen and Zhentong Huang and Jingyun Yao and Yinyin Liang and Kehui Cui and Xiaohua Ma and Yue Hao},
year = {2026},
journal = {Micromachines},
doi = {10.3390/mi17080889},
url = {https://doi.org/10.3390/mi17080889}
}RIS
TY - JOUR TI - High-Efficiency Sub-100 nm Gate GaN HEMTs Enabled by Two-Step SiNx Layer Etching Technique AU - Xiangxin Cao AU - Pengfei Wang AU - Minhan Mi AU - Xinyu Liu AU - Dongxu Xiao AU - Xiang Du AU - Maoteng Lu AU - Feiyang Chen AU - Zhentong Huang AU - Jingyun Yao AU - Yinyin Liang AU - Kehui Cui AU - Xiaohua Ma AU - Yue Hao PY - 2026 JO - Micromachines DO - 10.3390/mi17080889 UR - https://doi.org/10.3390/mi17080889 ER -
APA
Cao, X., Wang, P., Mi, M., Liu, X., Xiao, D., Du, X., Lu, M., Chen, F., Huang, Z., Yao, J., Liang, Y., Cui, K., Ma, X., & Hao, Y. (2026). High-Efficiency Sub-100 nm Gate GaN HEMTs Enabled by Two-Step SiNx Layer Etching Technique. Micromachines. https://doi.org/10.3390/mi17080889
Source records
- crossref · retrieved 2026-09-25T04:05:21.374Z