Simulation Study of IGCT with Backside P-N Anode for Low Turn-Off Loss.
- DOI
- 10.3390/mi17080923
- Published
- 2026 Jul 31
- Container
- Micromachines
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.3390/mi17080923,
title = {Simulation Study of IGCT with Backside P-N Anode for Low Turn-Off Loss.},
author = {Li L and Ji S and Wei X and Wang Y and Jiao Q and Wang L and Liu R and Tang X and Sun N and Wang N and Huo X and Gao Y and Ma J and Yue R},
year = {2026},
journal = {Micromachines},
doi = {10.3390/mi17080923},
url = {https://doi.org/10.3390/mi17080923}
}RIS
TY - JOUR TI - Simulation Study of IGCT with Backside P-N Anode for Low Turn-Off Loss. AU - Li L AU - Ji S AU - Wei X AU - Wang Y AU - Jiao Q AU - Wang L AU - Liu R AU - Tang X AU - Sun N AU - Wang N AU - Huo X AU - Gao Y AU - Ma J AU - Yue R PY - 2026 JO - Micromachines DO - 10.3390/mi17080923 UR - https://doi.org/10.3390/mi17080923 ER -
APA
L, L., S, J., X, W., Y, W., Q, J., L, W., R, L., X, T., N, S., N, W., X, H., Y, G., J, M., & R, Y. (2026). Simulation Study of IGCT with Backside P-N Anode for Low Turn-Off Loss.. Micromachines. https://doi.org/10.3390/mi17080923
Source records
- pubmed · retrieved 2026-09-26T18:47:56.595Z