Current Enhancement Behavior Under Positive Bias Stress in a-InGaZnO Thin-Film Transistors.

Yang G, Guo X, Li T, Guo Z, Huang G, Jiang Y, Sun H, Zhu H.

Open source

DOI
10.3390/mi17080928
Published
2026-08-01
Container
Micromachines (Basel)
Publisher
Not recorded
Open access
yes

Credibility signals

uncertain Score 53/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.

Show all credibility signals

Cite this work

BibTeX

@article{allodium:10.3390/mi17080928,
  title = {Current Enhancement Behavior Under Positive Bias Stress in a-InGaZnO Thin-Film Transistors.},
  author = {Yang G and  Guo X and  Li T and  Guo Z and  Huang G and  Jiang Y and  Sun H and  Zhu H.},
  year = {2026},
  journal = {Micromachines (Basel)},
  doi = {10.3390/mi17080928},
  url = {https://doi.org/10.3390/mi17080928}
}

RIS

TY  - JOUR
TI  - Current Enhancement Behavior Under Positive Bias Stress in a-InGaZnO Thin-Film Transistors.
AU  - Yang G
AU  -  Guo X
AU  -  Li T
AU  -  Guo Z
AU  -  Huang G
AU  -  Jiang Y
AU  -  Sun H
AU  -  Zhu H.
PY  - 2026
JO  - Micromachines (Basel)
DO  - 10.3390/mi17080928
UR  - https://doi.org/10.3390/mi17080928
ER  -

APA

G, Y., X, G., T, L., Z, G., G, H., Y, J., H, S., & H., Z. (2026). Current Enhancement Behavior Under Positive Bias Stress in a-InGaZnO Thin-Film Transistors.. Micromachines (Basel). https://doi.org/10.3390/mi17080928

Source records