Ferroelectric Hafnium Oxide for In-Memory Computing: Advancing Devices, Circuit Architectures, and System-Level Integration.

He C, Li W, Li J, Li Q, Xie Z, Du T

Open source

DOI: 10.3390/mi17080931
Published: 2026 Aug 4
Container: Micromachines
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.3390/mi17080931,
  title = {Ferroelectric Hafnium Oxide for In-Memory Computing: Advancing Devices, Circuit Architectures, and System-Level Integration.},
  author = {He C and Li W and Li J and Li Q and Xie Z and Du T},
  year = {2026},
  journal = {Micromachines},
  doi = {10.3390/mi17080931},
  url = {https://doi.org/10.3390/mi17080931}
}

RIS

TY  - JOUR
TI  - Ferroelectric Hafnium Oxide for In-Memory Computing: Advancing Devices, Circuit Architectures, and System-Level Integration.
AU  - He C
AU  - Li W
AU  - Li J
AU  - Li Q
AU  - Xie Z
AU  - Du T
PY  - 2026
JO  - Micromachines
DO  - 10.3390/mi17080931
UR  - https://doi.org/10.3390/mi17080931
ER  -

APA

C, H., W, L., J, L., Q, L., Z, X., & T, D. (2026). Ferroelectric Hafnium Oxide for In-Memory Computing: Advancing Devices, Circuit Architectures, and System-Level Integration.. Micromachines. https://doi.org/10.3390/mi17080931

Source records

pubmed · retrieved 2026-09-25T01:42:50.522Z
europe-pmc · retrieved 2026-09-25T01:42:50.548Z
doaj · retrieved 2026-09-25T01:42:50.531Z