High-Sensitivity AlGaN/GaN HFET Implantable Neural Probe Without Gate Control Enabled by Photoelectrochemical Etching
- DOI
- 10.3390/mi17080956
- Published
- 2026-08-12
- Container
- Micromachines
- Publisher
- MDPI AG
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.3390/mi17080956,
title = {High-Sensitivity AlGaN/GaN HFET Implantable Neural Probe Without Gate Control Enabled by Photoelectrochemical Etching},
author = {Yanyuan Ding and Xin Cao and Yang Li and Xien Yang and Ye Wen and Xiaodong Li and Xilei Huang and Zeyi Li and Jiefeng Weng and Baijun Zhang},
year = {2026},
journal = {Micromachines},
doi = {10.3390/mi17080956},
url = {https://doi.org/10.3390/mi17080956}
}RIS
TY - JOUR TI - High-Sensitivity AlGaN/GaN HFET Implantable Neural Probe Without Gate Control Enabled by Photoelectrochemical Etching AU - Yanyuan Ding AU - Xin Cao AU - Yang Li AU - Xien Yang AU - Ye Wen AU - Xiaodong Li AU - Xilei Huang AU - Zeyi Li AU - Jiefeng Weng AU - Baijun Zhang PY - 2026 JO - Micromachines DO - 10.3390/mi17080956 UR - https://doi.org/10.3390/mi17080956 ER -
APA
Ding, Y., Cao, X., Li, Y., Yang, X., Wen, Y., Li, X., Huang, X., Li, Z., Weng, J., & Zhang, B. (2026). High-Sensitivity AlGaN/GaN HFET Implantable Neural Probe Without Gate Control Enabled by Photoelectrochemical Etching. Micromachines. https://doi.org/10.3390/mi17080956
Source records
- crossref · retrieved 2026-09-24T19:50:23.789Z