Selective Plasma Mode Modulation in HfO2 Charge Trap Layers via RP/DP/RP Atomic Layer Deposition for Enhanced Memory Performance and Interface Quality
- DOI
- 10.3390/mi17080965
- Published
- 2026-08-15
- Container
- Micromachines
- Publisher
- MDPI AG
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.3390/mi17080965,
title = {Selective Plasma Mode Modulation in HfO2 Charge Trap Layers via RP/DP/RP Atomic Layer Deposition for Enhanced Memory Performance and Interface Quality},
author = {Byungwook Kim and Yongwoon Jang and Hyeonwu Nam and Changyun Hong and Minkyun Kang and Wookyung Lee and Changbun Yoon},
year = {2026},
journal = {Micromachines},
doi = {10.3390/mi17080965},
url = {https://doi.org/10.3390/mi17080965}
}RIS
TY - JOUR TI - Selective Plasma Mode Modulation in HfO2 Charge Trap Layers via RP/DP/RP Atomic Layer Deposition for Enhanced Memory Performance and Interface Quality AU - Byungwook Kim AU - Yongwoon Jang AU - Hyeonwu Nam AU - Changyun Hong AU - Minkyun Kang AU - Wookyung Lee AU - Changbun Yoon PY - 2026 JO - Micromachines DO - 10.3390/mi17080965 UR - https://doi.org/10.3390/mi17080965 ER -
APA
Kim, B., Jang, Y., Nam, H., Hong, C., Kang, M., Lee, W., & Yoon, C. (2026). Selective Plasma Mode Modulation in HfO2 Charge Trap Layers via RP/DP/RP Atomic Layer Deposition for Enhanced Memory Performance and Interface Quality. Micromachines. https://doi.org/10.3390/mi17080965
Source records
- crossref · retrieved 2026-09-25T13:19:45.605Z