Study of n-Channel 4H-SiC MOSFETs with a High-k/SiO(2) Stacked Gate Dielectric and a p(+)-Polysilicon Gate.
- DOI
- 10.3390/mi17091017
- Published
- 2026 Aug 27
- Container
- Micromachines
- Publisher
- Not recorded
- Open access
- yes
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limited evidence Score 45/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.
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Cite this work
BibTeX
@article{allodium:10.3390/mi17091017,
title = {Study of n-Channel 4H-SiC MOSFETs with a High-k/SiO(2) Stacked Gate Dielectric and a p(+)-Polysilicon Gate.},
author = {Lin Z and Cheng N and Cai W and Hu J and Hu S},
year = {2026},
journal = {Micromachines},
doi = {10.3390/mi17091017},
url = {https://doi.org/10.3390/mi17091017}
}RIS
TY - JOUR TI - Study of n-Channel 4H-SiC MOSFETs with a High-k/SiO(2) Stacked Gate Dielectric and a p(+)-Polysilicon Gate. AU - Lin Z AU - Cheng N AU - Cai W AU - Hu J AU - Hu S PY - 2026 JO - Micromachines DO - 10.3390/mi17091017 UR - https://doi.org/10.3390/mi17091017 ER -
APA
Z, L., N, C., W, C., J, H., & S, H. (2026). Study of n-Channel 4H-SiC MOSFETs with a High-k/SiO(2) Stacked Gate Dielectric and a p(+)-Polysilicon Gate.. Micromachines. https://doi.org/10.3390/mi17091017
Source records
- pubmed · retrieved 2026-11-10T11:27:42.752Z