Damage Mechanism of GaN HEMT and Failure Analysis of Power Amplifier Under High-Altitude Electromagnetic Pulse.

Sun L, Wu H, Tian J, Bai K

DOI: 10.3390/mi17091085
Published: 2026 Sep 16
Container: Micromachines
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.3390/mi17091085,
  title = {Damage Mechanism of GaN HEMT and Failure Analysis of Power Amplifier Under High-Altitude Electromagnetic Pulse.},
  author = {Sun L and Wu H and Tian J and Bai K},
  year = {2026},
  journal = {Micromachines},
  doi = {10.3390/mi17091085},
  url = {https://doi.org/10.3390/mi17091085}
}

RIS

TY  - JOUR
TI  - Damage Mechanism of GaN HEMT and Failure Analysis of Power Amplifier Under High-Altitude Electromagnetic Pulse.
AU  - Sun L
AU  - Wu H
AU  - Tian J
AU  - Bai K
PY  - 2026
JO  - Micromachines
DO  - 10.3390/mi17091085
UR  - https://doi.org/10.3390/mi17091085
ER  -

APA

L, S., H, W., J, T., & K, B. (2026). Damage Mechanism of GaN HEMT and Failure Analysis of Power Amplifier Under High-Altitude Electromagnetic Pulse.. Micromachines. https://doi.org/10.3390/mi17091085

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pubmed · retrieved 2026-09-26T16:10:05.687Z